| PART |
Description |
Maker |
| MHPM7B25A120B MHPM7B25A120D |
25 AMP, 1200 VOLT HYBRID POWER MODULE
|
MOTOROLA[Motorola, Inc]
|
| SMJ-C6 |
180o HYBRID WIDE BANDWIDTH 200 - 1200 MHz
|
http://
|
| MHPM7A12A120A_D ON1948 |
12 AMP, 1200 VOLT HYBRID POWER MODULE
From old datasheet system
|
ON Semi
|
| CM75DY-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| APT25GT120BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA
|
Advanced Power Technology, Ltd.
|
| SDR1212CTJ SDR1210CTJ SDR1212DRJ |
12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-257
12AMPS 1000 - 1200 VOLTS 70 nsec ULTRA FAST CENTERTAP RECTIFIER
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
|
| CM400DU-24F |
Dual IGBTMOD 400 Amperes/1200 Volts 400 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor...
Powerex Power Semiconductors
Powerex, Inc.
|
| STTH1212G-TR STTH1212 STTH1212D STTH1212G |
12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
Ultrafast recovery - 1200 V diode
|
STMicroelectronics
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| STTH312B -STTH312B |
Ultrafast recovery - 1200 V diode
3 A, 1200 V, SILICON, RECTIFIER DIODE
|
STMICROELECTRONICS
|
| 1H0263-3 |
250 MHz - 500 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.3 dB INSERTION LOSS-MAX
Hybrid Couplers
|
ANAREN INC
Anaren Microwave
|
